Description
MOSFET 2N-CH 20V 0.8A SOT666 Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 800mA Rds On (Max) @ Id, Vgs: 380 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250米A Gate Charge (Qg) @ Vgs: 0.68nC @ 4.5V Input Capacitance (Ciss) @ Vds: 83pF @ 10V Power - Max: 500mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666
Part Number | PMDT290UNE,115 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Nexperia |
Description | MOSFET 2N-CH 20V 0.8A SOT666 |
Series | Automotive, AEC-Q101, TrenchMOS |
Packaging | 2 N-Channel (Dual) |
FET Type | |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 800mA |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.68nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 83pF @ 10V |
Power - Max | 500mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-666 |
Image |
PMDT290UNE,115
NEXP
602667
1.18
IC Chip Co., Ltd.
PMDT290UNE,115
NEXPRIA
5000
2.1825
CIS Ltd (CHECK IC SOLUTION LIMITED)
PMDT290UNE,115
Nexperia
180
3.185
SUNTOP SEMICONDUCTOR CO., LIMITED
PMDT290UNE115
Nexperia USA Inc.
6790
4.1875
Dedicate Electronics (HK) Limited
PMDT290UNE,115
Nexperia/
30000
5.19
HK CSY-ELECTRONICS CO., LIMITED