Description
MOSFET 2P-CH 20V 3.6A HUSON6 Series: - FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 3.6A Rds On (Max) @ Id, Vgs: 67 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250米A Gate Charge (Qg) @ Vgs: 9.5nC @ 4.5V Input Capacitance (Ciss) @ Vds: 804pF @ 10V Power - Max: 515mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-HUSON (2x2)
Part Number | PMDPB58UPE,115 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Nexperia |
Description | MOSFET 2P-CH 20V 3.6A HUSON6 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3.6A |
Rds On (Max) @ Id, Vgs | 67 mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 9.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 804pF @ 10V |
Power - Max | 515mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-UDFN Exposed Pad |
Supplier Device Package | DFN2020-6 |
Image |
PMDPB58UPE,115
NEXP
1236
1.22
AMAX ELECTRONIC TECHNOLOGY PTE.LTD.
PMDPB58UPE,115
NEXPRIA
19846
2.375
NEW IDEAS INDUSTRIAL CO., LIMITED
PMDPB58UPE,115
Nexperia
12846
3.53
CIS Ltd (CHECK IC SOLUTION LIMITED)
PMDPB58UPE,115
Nexperia USA Inc.
250
4.685
Yingxinyuan INT'L (Group) Limited
PMDPB58UPE115
Nexperia/
44000
5.84
N&S Electronic Co., Limited