Description
MOSFET 2N-CH 30V 3.1A HUSON6 Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 3.1A Rds On (Max) @ Id, Vgs: 73 mOhm @ 3.1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250米A Gate Charge (Qg) @ Vgs: 2.9nC @ 4.5V Input Capacitance (Ciss) @ Vds: 170pF @ 15V Power - Max: 510mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-HUSON (2x2)
Part Number | PMDPB56XN,115 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Nexperia |
Description | MOSFET 2N-CH 30V 3.1A HUSON6 |
Series | - |
Packaging | |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 3.1A |
Rds On (Max) @ Id, Vgs | 73 mOhm @ 3.1A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 2.9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 170pF @ 15V |
Power - Max | 510mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-UDFN Exposed Pad |
Supplier Device Package | DFN2020-6 |
Image |
PMDPB56XN,115
NEXP
13500
0.01
HK HEQING ELECTRONICS LIMITED
PMDPB56XN,115
NEXPRIA
25860
1.4675
YU TUO (HONGKONG) TRADING CO., LIMITED
PMDPB56XN,115
Nexperia
16000
2.925
CIS Ltd (CHECK IC SOLUTION LIMITED)
PMDPB56XN,115
Nexperia USA Inc.
14451
4.3825
ATLANTIC TECHNOLOGY LIMITED
PMDPB56XN115
Nexperia/
13500
5.84
Antony Electronic Ltd.