Description
MOSFET 2N-CH 20V 3.9A HUSON6 Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 3.9A Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250米A Gate Charge (Qg) @ Vgs: 3.5nC @ 4.5V Input Capacitance (Ciss) @ Vds: 185pF @ 10V Power - Max: 510mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-HUSON (2x2)
Part Number | PMDPB42UN,115 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Nexperia |
Description | MOSFET 2N-CH 20V 3.9A HUSON6 |
Series | - |
Packaging | |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3.9A |
Rds On (Max) @ Id, Vgs | 50 mOhm @ 3.9A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 3.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 185pF @ 10V |
Power - Max | 510mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-UDFN Exposed Pad |
Supplier Device Package | DFN2020-6 |
Image |
PMDPB42UN,115
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