(4/5) based on 15 customer reviews
Description
MOSFET N/P-CH 30V 8SOIC Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25～C: 3.5A, 2.3A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) @ Vds: 250pF @ 20V Power - Max: 2W Operating Temperature: 150～C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
| Part Number | PHC21025,118 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Nexperia |
| Description | MOSFET N/P-CH 30V 8SOIC |
| Series | - |
| Packaging | Cut Tape (CT) |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A, 2.3A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 2.2A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 20V |
| Power - Max | 2W |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Image |  |
PHC21025,118
NEXP
2500
1.03
HK HEQING ELECTRONICS LIMITED
PHC21025,118
NEXPRIA
2500
2.4325
Feture Technology Limited
PHC21025,118 MOS()
Nexperia
100000
3.835
HK CSY-ELECTRONICS CO., LIMITED
PHC21025118
Nexperia USA Inc.
5998
5.2375
Huajiaxin Electronic Technology (Hong Kong) Co., Limited
PHC21025118
Nexperia/
5998
6.64
JINRUIXIN TECHNOLOGY (HONG KONG) LIMITED
