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Description
Datasheet BSS138N . PG-SOT-23 H6433: 10000. SKs. Rev. 2.86 page 1. 2012-04-17. Parameter. Symbol Conditions. Unit. Continuous drain current. I D. T A=25 C. 0.23. 1. 2. 3. Material Content Data Sheet. Sales Product Name. BSS138N H6327. Issued. 29. August 2013. MA#. MA001097548. Package. PG-SOT23-3-5. Weight* . Nov 2, 2010 1. Product profile. 1.1 General description. Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small. SOT363 (SC-88) BSS138. Document number: DS30144 Rev. 20 - 2. 1 of 5 www.diodes.com. November 2013. Diodes Incorporated. BSS138. N-CHANNEL ENHANCEMENT BSS138 N -channel MOSFET can be utilized instead. If the accuracy and temperature drift of the total design has stringent requirements, use a more accurate
| Part Number | BSS138N |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Nexperia |
| Description | MOSFET N-CH 60V 230MA SOT-23 |
| Series | SIPMOS |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 230mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 41pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Rds On (Max) @ Id, Vgs | 3.5 Ohm @ 230mA, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT23-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Image |  |
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