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Description
Jun 4, 2012 MJD32C . Low voltage PNP power transistor. Datasheet production data. Features. Surface-mounting TO-252 power package in tape and Diodes Incorporated. MJD32C . 100V PNP HIGH VOLTAGE TRANSISTOR IN TO252. Features. . BVCEO > -100V. . IC = -3A high Continuous Collector Current. Unit. Collector Emitter Voltage. MJD31, MJD32. MJD31C, MJD32C . VCEO. 40. 100. Vdc. Collector Base Voltage. MJD31, MJD32. MJD31C, MJD32C . VCB. 40. MJD32C . ICES. Collector Cutoff Current. (VCE=-100Vdc, VEB=0). (IC=-3Adc, VCE=-4Vdc). VBE(on). Base-Emitter Voltage. (IC=-3Adc, VCE=-4Vdc ) (note 1). ---. MJD32C : 3.0 A, 100 V PNP Bipolar Power Transistor. For complete documentation, see the data sheet. The Bipolar Power Transistor is designed for general
| Part Number | MJD32C |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | Nexperia |
| Description | TRANS PNP 100V 3A D-PAK |
| Series | - |
| Packaging | Tube |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 3A |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V |
| Power - Max | 15W |
| Frequency - Transition | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | D-Pak |
| Image |  |
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